Publication:

The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer

Date

2004
Proceedings Paper
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dc.contributor.authorPawlak, Bartek
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLindsay, Richard
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorRoozeboom, F.
dc.contributor.authorDelhougne, Romain
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMaex, Karen
dc.contributor.authorCowern, N.E.B.
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T15:23:07Z
dc.date.available2021-10-15T15:23:07Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9412
dc.source.beginpageC9.6/B9.6
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Fransisco, CA USA
dc.title

The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer

dc.typeProceedings paper
dspace.entity.typePublication
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