Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Arora, Rajan; Simoen, Eddy; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Choi, Bo K.; Mitard, Jerome; Meuris, Marc; Claeys, Cor; Madan, Anuj; Cressler, John D.

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Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

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2010

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IEEE Transactions on Nuclear Science

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1911 since deposited on 2021-10-18

Acq. date: 2026-04-26

Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

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