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Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs
Publication:
Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs
Date
2010
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Arora, Rajan
;
Simoen, Eddy
;
Zhang, En Xia
;
Fleetwood, Daniel M.
;
Schrimpf, Ronald D.
;
Galloway, Kenneth F.
;
Choi, Bo K.
;
Mitard, Jerome
;
Meuris, Marc
;
Claeys, Cor
;
Madan, Anuj
;
Cressler, John D.
Journal
IEEE Transactions on Nuclear Science
Abstract
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1906
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1906
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations