Publication:

Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Date

2010
Journal article
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dc.contributor.authorArora, Rajan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorChoi, Bo K.
dc.contributor.authorMitard, Jerome
dc.contributor.authorMeuris, Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorMadan, Anuj
dc.contributor.authorCressler, John D.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T15:16:16Z
dc.date.available2021-10-18T15:16:16Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16669
dc.source.beginpage1933
dc.source.endpage1939
dc.source.issue4
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume57
dc.title

Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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