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Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaN
Publication:
Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaN
Date
2024
Journal article
https://doi.org/10.1109/TED.2024.3422950
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Filho Goncalez, Walter
;
Borga, Matteo
;
Geens, Karen
;
Khan, Md Arif
;
Cingu, Deepthi
;
Chatterjee, Urmimala
;
Decoutere, Stefaan
;
Knaepen, Werner
;
Kizir, Seda
;
Arnou, Panagiota
;
Bakeroot, Benoit
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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636
since deposited on 2024-08-05
484
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
636
since deposited on 2024-08-05
484
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations