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Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaN

 
dc.contributor.authorFilho Goncalez, Walter
dc.contributor.authorBorga, Matteo
dc.contributor.authorGeens, Karen
dc.contributor.authorKhan, Md Arif
dc.contributor.authorCingu, Deepthi
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorKnaepen, Werner
dc.contributor.authorKizir, Seda
dc.contributor.authorArnou, Panagiota
dc.contributor.authorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorKhan, Md Arif
dc.contributor.imecauthorCingu, Deepthi
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorFilho Goncalez, Walter
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecKhan, Md Arif::0000-0003-4503-8136
dc.contributor.orcidimecCingu, Deepthi::0000-0002-3042-7289
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2024-10-09T09:24:41Z
dc.date.available2024-08-05T18:18:29Z
dc.date.available2024-10-09T09:24:41Z
dc.date.issued2024
dc.identifier.doi10.1109/TED.2024.3422950
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44269
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage5212
dc.source.endpage5217
dc.source.issue9
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume71
dc.subject.keywordsISSUES
dc.title

Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaN

dc.typeJournal article
dspace.entity.typePublication
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