Publication:

Cluster formation during annealing of ultra-low-energy boron-implanted silicon

Date

2000
Journal article
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dc.contributor.authorCollart, E. J. H.
dc.contributor.authorMurrell, A. J.
dc.contributor.authorFoad, M. A.
dc.contributor.authorvan den Berg, J. A.
dc.contributor.authorZhang, S.
dc.contributor.authorArmour, D.
dc.contributor.authorGoldberg, R. D.
dc.contributor.authorWang, T. S.
dc.contributor.authorCullis, A. G.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-14T12:44:51Z
dc.date.available2021-10-14T12:44:51Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4206
dc.source.beginpage435
dc.source.endpage439
dc.source.issue1
dc.source.journalJ. Vacuum Science and Technology B
dc.source.volumeB18
dc.title

Cluster formation during annealing of ultra-low-energy boron-implanted silicon

dc.typeJournal article
dspace.entity.typePublication
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