Publication:

SiGe SEG growth for buried channel p-MOS devices

Date

2009-10
Proceedings Paper
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorTakeoka, Shinji
dc.contributor.authorGeypen, Jef
dc.contributor.authorBrijs, Bert
dc.contributor.authorMerckling, Clement
dc.contributor.authorCaymax, Matty
dc.contributor.authorDekoster, Johan
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDekoster, Johan
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-17T22:55:10Z
dc.date.available2021-10-17T22:55:10Z
dc.date.embargo9999-12-31
dc.date.issued2009-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15479
dc.source.beginpage201
dc.source.conferenceULSI Process Integration 6
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.source.endpage210
dc.title

SiGe SEG growth for buried channel p-MOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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