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Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

Date

2009
Meeting abstract
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dc.contributor.authorNguyen, Duy
dc.contributor.authorRosseel, Erik
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorYang, Lijun
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorMoussa, Alain
dc.contributor.authorClarysse, Trudo
dc.contributor.authorLoo, Roger
dc.contributor.authorLin, Vic
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T01:08:43Z
dc.date.available2021-10-18T01:08:43Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15921
dc.source.beginpage78
dc.source.conferenceAbstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6
dc.source.conferencedate17/05/2009
dc.source.conferencelocationLos Angeles, CA USA
dc.source.endpage79
dc.title

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

dc.typeMeeting abstract
dspace.entity.typePublication
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