Publication:

Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates

Date

2019
Journal article
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dc.contributor.authorGong, H.
dc.contributor.authorNi, K.
dc.contributor.authorZhang, E.X.
dc.contributor.authorSternberg, A. L.
dc.contributor.authorKuzub, J.A.
dc.contributor.authorAlles, M.L.
dc.contributor.authorReed, R.
dc.contributor.authorFleetwood, D.
dc.contributor.authorSchrimpf, R.
dc.contributor.authorWaldron, Niamh
dc.contributor.authorKunert, Bernardette
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-27T09:42:20Z
dc.date.available2021-10-27T09:42:20Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33042
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8532366
dc.source.beginpage376
dc.source.endpage383
dc.source.issue1
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume66
dc.title

Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates

dc.typeJournal article
dspace.entity.typePublication
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