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Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x

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dc.contributor.authorShimura, Yosuke
dc.contributor.authorWang, Wei
dc.contributor.authorNieddu, Thomas
dc.contributor.authorGencarelli, Federica
dc.contributor.authorVincent, Benjamin
dc.contributor.authorLaha, Priya
dc.contributor.authorTerryn, Herman
dc.contributor.authorStefanov, Stefan
dc.contributor.authorChiussi, Stefano
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorNguyen, Ngoc Duy
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-21T12:01:57Z
dc.date.available2021-10-21T12:01:57Z
dc.date.issued2013-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23079
dc.source.beginpage65
dc.source.conference8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
dc.source.endpage66
dc.title

Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x

dc.typeProceedings paper
dspace.entity.typePublication
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