2024 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
Abstract
In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable ION−451 μA/μm at VDS=1 V, achieved with two tiers of monolayer-MoS2 channels. The device has a record ION/IOFF>109 and a yield of 96.59%, which shows good electro-static control in the nanosheet channels. We compare these results to dual gate 2D FETs and show how learnings on the planar devices can be utilized in a gate-all-around case. The successful demonstration of stacked 2D nanosheet FETs with high performance further extends Moore's Law scaling with the future 2D CFETs application.
