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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Date

2019
Proceedings Paper
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dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorStesmans, Andre
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-27T10:33:50Z
dc.date.available2021-10-27T10:33:50Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33171
dc.identifier.urlhttp://ecst.ecsdl.org/content/92/1/45.abstract
dc.source.beginpage45
dc.source.conferenceSemiconductors, Dielectrics, and Metals for Nanoelectronics 17
dc.source.conferencedate13/10/2019
dc.source.conferencelocationAtlanta, GA USA
dc.source.endpage55
dc.title

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

dc.typeProceedings paper
dspace.entity.typePublication
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