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Articles
High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects
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High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects
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Date
2012
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23771.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Trojman, Lionel
;
Pantisano, Luigi
;
Ragnarsson, Lars-Ake
Journal
IEEE Transactions on Electron Devices
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1912
since deposited on 2021-10-20
Acq. date: 2025-12-10
Citations
Metrics
Views
1912
since deposited on 2021-10-20
Acq. date: 2025-12-10
Citations