High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects

dc.contributor.author	Trojman, Lionel
dc.contributor.author	Pantisano, Luigi
dc.contributor.author	Ragnarsson, Lars-Ake
dc.contributor.imecauthor	Ragnarsson, Lars-Ake
dc.contributor.orcidimec	Ragnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned	2021-10-20T17:09:34Z
dc.date.available	2021-10-20T17:09:34Z
dc.date.embargo	9999-12-31
dc.date.issued	2012
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/21636
dc.source.beginpage	1856
dc.source.endpage	1862
dc.source.issue	7
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	59
dc.title	High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects
dc.type	Journal article
dspace.entity.type	Publication
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