Publication:
Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
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274 since deposited on 2024-09-10
55last month
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451 since deposited on 2024-09-10
2last month
Acq. date: 2026-08-07
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