Publication:

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

Date

2024
Journal article
https://doi.org/10.3390/mi15080951
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dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRathi, Aarti
dc.contributor.authorAlian, Alireza
dc.contributor.authorYadav, Sachin
dc.contributor.authorYu, Hao
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorParvais, Bertrand
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRathi, Aarti
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRathi, Aarti::0000-0002-3858-1723
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSibaja-Hernandez, Arturo::0000-0002-2315-9028
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.date.accessioned2025-01-23T09:52:57Z
dc.date.available2024-09-10T17:34:03Z
dc.date.available2025-01-23T09:52:57Z
dc.date.embargo2024-07-24
dc.date.issued2024
dc.identifier.doi10.3390/mi15080951
dc.identifier.issn2072-666X
dc.identifier.pmidMEDLINE:39203602
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44455
dc.publisherMDPI
dc.source.beginpageArt. 951
dc.source.endpageN/A
dc.source.issue8
dc.source.journalMICROMACHINES
dc.source.numberofpages13
dc.source.volume15
dc.title

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

dc.typeJournal article
dspace.entity.typePublication
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