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Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
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Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Li, Zilan
;
Schram, Tom
;
Pantisano, Luigi
;
Witters, Thomas
;
Stesmans, Andre
;
Akheyar, Amal
;
Afanasiev, Valeri
;
Yamada, Naoki
;
Tsunoda, Takaaki
;
De Gendt, Stefan
;
De Meyer, Kristin
Journal
Microelectronic Engineering
Abstract
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1947
since deposited on 2021-10-16
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Acq. date: 2025-12-11
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Views
1947
since deposited on 2021-10-16
1
last month
1
last week
Acq. date: 2025-12-11
Citations