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Etch rates of Ge, GaAs and InGaAs in acids, bases and peroxide based mixtures

Date

2008
Proceedings Paper
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dc.contributor.authorSioncke, Sonja
dc.contributor.authorBrunco, David
dc.contributor.authorMeuris, Marc
dc.contributor.authorUwamahoro, Olivier
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorVrancken, Evi
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T10:51:06Z
dc.date.available2021-10-17T10:51:06Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14486
dc.source.beginpage451
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate13/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage460
dc.title

Etch rates of Ge, GaAs and InGaAs in acids, bases and peroxide based mixtures

dc.typeProceedings paper
dspace.entity.typePublication
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