Publication:

Reliability of high mobility (si)Ge channel pMOSFETs for future CMOS applications: toward reliable ultra-thin EOT nanoscale transistors

Date

 
dc.contributor.authorFranco, Jacopo
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.thesisadvisorGroeseneken, Guido
dc.contributor.thesisadvisorHeyns, Marc
dc.date.accessioned2021-10-21T07:40:23Z
dc.date.available2021-10-21T07:40:23Z
dc.date.embargo9999-12-31
dc.date.issued2013-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22357
dc.title

Reliability of high mobility (si)Ge channel pMOSFETs for future CMOS applications: toward reliable ultra-thin EOT nanoscale transistors

dc.typePHD thesis
dspace.entity.typePublication
Files

Original bundle

Name:
28080.pdf
Size:
11.63 MB
Format:
Adobe Portable Document Format
Publication available in collections: