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First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices
Publication:
First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices
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Date
2021
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ajaykumar, Arjun
;
Breuil, Laurent
;
Katcko, Kostantine
;
Schleicher, Filip
;
Sebaai, Farid
;
Oniki, Yusuke
;
Ramesh, Siva
;
Arreghini, Antonio
;
Nyns, Laura
;
Soulie, Jean-Philippe
;
Stiers, Jimmy
;
Rosmeulen, Maarten
;
Van den Bosch, Geert
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1996
since deposited on 2021-10-31
3
last month
1
last week
Acq. date: 2025-12-10
Citations
Metrics
Views
1996
since deposited on 2021-10-31
3
last month
1
last week
Acq. date: 2025-12-10
Citations