Publication:

First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices

Date

2021
Proceedings Paper
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dc.contributor.authorAjaykumar, Arjun
dc.contributor.authorBreuil, Laurent
dc.contributor.authorKatcko, Kostantine
dc.contributor.authorSchleicher, Filip
dc.contributor.authorSebaai, Farid
dc.contributor.authorOniki, Yusuke
dc.contributor.authorRamesh, Siva
dc.contributor.authorArreghini, Antonio
dc.contributor.authorNyns, Laura
dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorStiers, Jimmy
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorVan den Bosch, Geert
dc.contributor.imecauthorAjaykumar, Arjun
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorKatcko, Kostantine
dc.contributor.imecauthorSchleicher, Filip
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorStiers, Jimmy
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecKatcko, Kostantine::0000-0002-0576-8962
dc.contributor.orcidimecSchleicher, Filip::0000-0003-3630-7285
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.accessioned2021-10-31T08:03:46Z
dc.date.available2021-10-31T08:03:46Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36439
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9508691
dc.source.conference2021 Symposium on VLSI Technology
dc.source.conferencedate13/06/2021
dc.source.conferencelocationVirtual Japan
dc.title

First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices

dc.typeProceedings paper
dspace.entity.typePublication
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