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Understanding endurance in TiN/a-Si/TiOx/TiN RRAM devices

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dc.contributor.authorSubhechha, Subhali
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorGoux, Ludovic
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-26T04:55:56Z
dc.date.available2021-10-26T04:55:56Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31878
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8388856
dc.source.beginpage1
dc.source.conferenceIEEE International Memory Workshop - IMW
dc.source.conferencedate13/05/2018
dc.source.conferencelocationKyoto Japan
dc.source.endpage4
dc.title

Understanding endurance in TiN/a-Si/TiOx/TiN RRAM devices

dc.typeProceedings paper
dspace.entity.typePublication
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