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On the characterization of the strain field of lattice defects in silicon with nanometer resolution

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dc.contributor.authorJanssens, Koenraad
dc.contributor.authorVan der Biest, O.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T12:42:27Z
dc.date.available2021-09-29T12:42:27Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/206
dc.source.beginpage22
dc.source.conferenceDefect Recognition and Image Processing in Semiconductors and Devices; 6-10 Sept. 1993; Santander, Spain.
dc.source.endpage24
dc.title

On the characterization of the strain field of lattice defects in silicon with nanometer resolution

dc.typeProceedings paper
dspace.entity.typePublication
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