Addressing Integration Challenges in Direct Backside Contact of CFET

Sheng, Cassie; Demuynck, Steven; Stiers, Karen; Peng, A.; Toledo de Carvalho Cavalcante, Camila; Chiarella, Thomas; Vandooren, Anne; Hosseini, Maryam; Batuk, Dmitry; Puttarame Gowda, Pallavi; Sebaai, Farid; Vandersmissen, Kevin; Chukka, Rami; Di Donato, L.; Sun, W.; Hasan, Mahmudul; Weldeslassie, Ataklti; Cerbu, Dorin; Jourdan, Nicolas; Mingardi, Andrea

doi:10.1109/IITC66087.2025.11075391

Publication:

Addressing Integration Challenges in Direct Backside Contact of CFET

Date

2025

Proceedings Paper

https://doi.org/10.1109/IITC66087.2025.11075391

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Journal

2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC

Abstract

This work explores the integration challenges of direct backside contact (DBC) to the source and drain (SD) of the bottom PMOS in complementary field-effect transistors (CFET). We investigate various contact failures, including backside bottom contact opens and via contact opens. Through root cause analysis, we apply multiple integration approaches to mitigate these challenges. Our results demonstrate a significant improvement in PMOS DBC enhancing contact success rate.