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X-ray microdiffraction measurements to support epitaxial growth studies of strained Ge-cap / relaxed SiGe on STI nano-scale patterned Si wafers

Date

2015
Book
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dc.contributor.authorLoo, Roger
dc.contributor.authorShimura, Yosuke
dc.contributor.authorSun, Jianwu
dc.contributor.authorIke, Shinichi
dc.contributor.authorInuzuka, Yuuki
dc.contributor.authorNakatsuka, Osau
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorImai, Yasuhiko
dc.contributor.authorKimura, Shigeru
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T20:40:39Z
dc.date.available2021-10-22T20:40:39Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25574
dc.identifier.urlhttps://user.spring8.or.jp/apps/experimentreport/detail/16607/en
dc.source.numberofpages1
dc.title

X-ray microdiffraction measurements to support epitaxial growth studies of strained Ge-cap / relaxed SiGe on STI nano-scale patterned Si wafers

dc.typeBook
dspace.entity.typePublication
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