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Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si

Date

2001
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dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2021-10-14T17:53:15Z
dc.date.available2021-10-14T17:53:15Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5675
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
dc.title

Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si

dc.typeOral presentation
dspace.entity.typePublication
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