Publication:

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FET

Date

2021
Journal article
https://doi.org/10.1109/TED.2021.3096510
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dc.contributor.authorHigashi, Yusuke
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorKaczer, Ben
dc.contributor.authorAlam, Md Nur Kutubul
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorBreuil, Laurent
dc.contributor.authorWalke, Amey
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorHigashi, Yusuke
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAlam, Md Nur Kutubul
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecHigashi, Y.::0000-0001-6121-0069
dc.contributor.orcidimecAlam, Md Nur K.::0000-0002-4608-3556
dc.contributor.orcidimecMcMitchell, S. R. C.::0000-0002-9916-0973
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2022-02-24T16:12:00Z
dc.date.available2022-02-24T16:12:00Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3096510
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39126
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage4391
dc.source.endpage4396
dc.source.issue9
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume68
dc.subject.keywordsOXIDE
dc.title

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FET

dc.typeJournal article
dspace.entity.typePublication
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