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Fabrication of 50nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
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Fabrication of 50nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
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Date
2003-01
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Loo, Roger
;
Collaert, Nadine
;
Verheyen, Peter
;
Caymax, Matty
;
Delhougne, Romain
;
De Meyer, Kristin
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1855
since deposited on 2021-10-15
Acq. date: 2025-12-16
Citations
Metrics
Views
1855
since deposited on 2021-10-15
Acq. date: 2025-12-16
Citations