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Fabrication of 50nm high performance strained-SiGe pMOSFETs with selective epitaxial growth

Date

2003-01
Meeting abstract
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dc.contributor.authorLoo, Roger
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerheyen, Peter
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelhougne, Romain
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-15T05:27:24Z
dc.date.available2021-10-15T05:27:24Z
dc.date.issued2003-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7821
dc.source.beginpage49
dc.source.conferenceBook of Abstracts ISTDM - 1st International SiGe Technology and Device Meeting
dc.source.conferencedate15/01/2003
dc.source.conferencelocationNagoya Japan
dc.source.endpage50
dc.title

Fabrication of 50nm high performance strained-SiGe pMOSFETs with selective epitaxial growth

dc.typeMeeting abstract
dspace.entity.typePublication
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