Publication:
Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts
Date
Loading...
Journal
Abstract
Description
Statistics
Views
2005 since deposited on 2021-10-27
Acq. date: 2026-04-25
Citations
Statistics
Views
2005 since deposited on 2021-10-27
Acq. date: 2026-04-25
Citations