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Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts

Date

2019
Meeting abstract
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dc.contributor.authorHuang, Yan-Hua
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRengo, Gianluca
dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorHeyns, Marc
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-27T10:36:27Z
dc.date.available2021-10-27T10:36:27Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33177
dc.source.conference2019 EMRS fall meeting
dc.source.conferencedate16/09/2019
dc.source.conferencelocationWarsaw Poland
dc.title

Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts

dc.typeMeeting abstract
dspace.entity.typePublication
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