Publication:

Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications

 
dc.contributor.authorKilchytska, Valeriya
dc.contributor.authorMakovejev, Sergej
dc.contributor.authorNyssens, Lucas
dc.contributor.authorHalder, Arka
dc.contributor.authorRaskin, Jean-Pierre
dc.contributor.authorFlandre, Denis
dc.contributor.authorKazemi Esfeh, Babak
dc.contributor.imecauthorKazemi Esfeh, Babak
dc.contributor.orcidextKilchytska, Valeriya::0000-0002-8540-3313
dc.contributor.orcidextNyssens, Lucas::0000-0003-3996-7553
dc.contributor.orcidextHalder, Arka::0000-0002-4809-4902
dc.contributor.orcidextFlandre, Denis::0000-0001-5298-5196
dc.date.accessioned2021-11-25T09:12:37Z
dc.date.available2021-11-02T16:02:23Z
dc.date.available2021-11-25T09:12:37Z
dc.date.issued2021
dc.identifier.doi10.1109/JEDS.2021.3057798
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37982
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage500
dc.source.endpage510
dc.source.issue1
dc.source.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
dc.source.numberofpages11
dc.source.volume9
dc.subject.keywordsTHRESHOLD VOLTAGE EXTRACTION
dc.subject.keywordsSIGNAL OUTPUT CONDUCTANCE
dc.subject.keywordsULTRA-THIN BODY
dc.subject.keywordsSOI MOSFETS
dc.subject.keywordsPARASITIC ELEMENTS
dc.subject.keywordsFIGURES
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsBEHAVIOR
dc.subject.keywordsUTBB
dc.subject.keywordsTEMPERATURE
dc.title

Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications

dc.typeJournal article
dspace.entity.typePublication
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