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High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation
Publication:
High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation
Date
2011
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yamaguchi, Shinpei
;
Witters, Liesbeth
;
Mitard, Jerome
;
Eneman, Geert
;
Hellings, Geert
;
Fukuda, Masahiro
;
Hikavyy, Andriy
;
Loo, Roger
;
Veloso, Anabela
;
Crabbe, Yvo
;
Rohr, Erika
;
Favia, Paola
;
Bender, Hugo
;
Takeoka, S.
;
Vellianitis, Georgios
;
Wang, Wei-E
;
Ragnarsson, Lars-Ake
;
De Meyer, Kristin
;
Steegen, An
;
Horiguchi, Naoto
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1886
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
1886
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations