Publication:

High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

Date

2011
Proceedings Paper
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dc.contributor.authorYamaguchi, Shinpei
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorHellings, Geert
dc.contributor.authorFukuda, Masahiro
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCrabbe, Yvo
dc.contributor.authorRohr, Erika
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorTakeoka, S.
dc.contributor.authorVellianitis, Georgios
dc.contributor.authorWang, Wei-E
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorSteegen, An
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVellianitis, Georgios
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-19T21:59:48Z
dc.date.available2021-10-19T21:59:48Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20169
dc.source.beginpage829
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
dc.source.endpage832
dc.title

High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

dc.typeProceedings paper
dspace.entity.typePublication
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