Publication:

Low-frequency noise in strained and relaxed Ge pMOSFETs

Date

2010
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorEneman, Geert
dc.contributor.authorDobbie, A.
dc.contributor.authorMyronov, M.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T21:37:04Z
dc.date.available2021-10-18T21:37:04Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17991
dc.source.conferenceInternational Conference on Solid-State and Integrated Circuit Technology
dc.source.conferencedate1/11/2010
dc.source.conferencelocationShanghai China
dc.title

Low-frequency noise in strained and relaxed Ge pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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