Publication:

Selective wet etching in fabricating SiGe and Ge nanowires for gate-all-around MOSFETs

Date

2018
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorLiu, W.D.
dc.contributor.authorLee, Y.C.
dc.contributor.authorSekiguchi, R.
dc.contributor.authorYoshida, Y.
dc.contributor.authorKomori, K.
dc.contributor.authorWostyn, Kurt
dc.contributor.authorSebaai, Farid
dc.contributor.authorHolsteyns, Frank
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.date.accessioned2021-10-25T22:16:53Z
dc.date.available2021-10-25T22:16:53Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31208
dc.identifier.urlhttps://doi.org/10.4028/www.scientific.net/SSP.282.101
dc.source.beginpage101
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate3/09/2018
dc.source.conferencelocationLeuven Belgium
dc.source.endpage106
dc.title

Selective wet etching in fabricating SiGe and Ge nanowires for gate-all-around MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions