Publication:

Relaxation induced excess leakage current in recessed Si1-xGex source/drain junctions

Date

2007
Proceedings Paper
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dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorChowdhury, Mohammad Kamruzzaman
dc.contributor.authorBhouri, Nada
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLeys, Frederik
dc.contributor.authorRichard, Olivier
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTomasini, P.
dc.contributor.authorThomas, S.G.
dc.contributor.authorLu, J.P.
dc.contributor.authorWeijtmans, J.W.
dc.contributor.authorWise, R.
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T15:02:40Z
dc.date.available2021-10-16T15:02:40Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11697
dc.source.beginpage389
dc.source.conferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3: New Materials, Processes and Equipment
dc.source.conferencedate6/05/2007
dc.source.conferencelocationChicago, IL USA
dc.source.endpage396
dc.title

Relaxation induced excess leakage current in recessed Si1-xGex source/drain junctions

dc.typeProceedings paper
dspace.entity.typePublication
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