Publication:

Lateral versus vertical gate-all-around FETs for beyond 7nm technologies

Date

2014
Proceedings Paper
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dc.contributor.authorYakimets, Dmitry
dc.contributor.authorHuynh Bao, Trong
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorDehan, Morin
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorTokei, Zsolt
dc.contributor.authorThean, Aaron
dc.contributor.authorVerkest, Diederik
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorGarcia Bardon, Marie
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorVerkest, Diederik
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecVerkest, Diederik::0000-0001-6567-2746
dc.date.accessioned2021-10-22T08:38:43Z
dc.date.available2021-10-22T08:38:43Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24856
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6872333&contentType=Conference+Publications
dc.source.beginpage133
dc.source.conference72nd Device Research Conference - DRC
dc.source.conferencedate22/06/2014
dc.source.conferencelocationSanta Barbara, CA USA
dc.source.endpage134
dc.title

Lateral versus vertical gate-all-around FETs for beyond 7nm technologies

dc.typeProceedings paper
dspace.entity.typePublication
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