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Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions
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Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions
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Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Van Beek, Simon
;
Martens, Koen
;
Roussel, Philippe
;
Donadio, Gabriele Luca
;
Swerts, Johan
;
Mertens, Sofie
;
Kar, Gouri Sankar
;
Min, Tai
;
Groeseneken, Guido
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1950
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Acq. date: 2025-12-11
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Views
1950
since deposited on 2021-10-22
2
last month
Acq. date: 2025-12-11
Citations