Publication:

Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions

Date

2015
Proceedings Paper
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dc.contributor.authorVan Beek, Simon
dc.contributor.authorMartens, Koen
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorSwerts, Johan
dc.contributor.authorMertens, Sofie
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorMin, Tai
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVan Beek, Simon
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Beek, Simon::0000-0002-2499-4172
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-22T23:52:28Z
dc.date.available2021-10-22T23:52:28Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26033
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7112818
dc.source.beginpageMY.4
dc.source.conferenceIEEE International Reliability Physics Symposisum - IRPS
dc.source.conferencedate19/04/2015
dc.source.conferencelocationMonterey, CA USA
dc.title

Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions

dc.typeProceedings paper
dspace.entity.typePublication
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