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Modelling of crystal originated particles and their impact on gate oxide integrity

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dc.contributor.authorBearda, Twan
dc.contributor.authorMertens, Paul
dc.contributor.authorWoerlee, P. H.
dc.contributor.authorWallinga, H.
dc.contributor.authorSchmolke, R.
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-10-14T21:08:24Z
dc.date.available2021-10-14T21:08:24Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6000
dc.source.beginpage528
dc.source.conferenceSemiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate12/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
dc.source.endpage539
dc.title

Modelling of crystal originated particles and their impact on gate oxide integrity

dc.typeProceedings paper
dspace.entity.typePublication
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