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Understanding ESD characteristics of GGNMOS in bulk FinFET technology
Publication:
Understanding ESD characteristics of GGNMOS in bulk FinFET technology
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Date
2020
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Wen Chieh
;
Chen, Shih-Hung
;
Hellings, Geert
;
Chiarella, Thomas
;
Chen, Jie
;
Subramanian, Sujith
;
Siew, Yong Kong
;
Linten, Dimitri
;
Groeseneken, Guido
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1998
since deposited on 2021-10-28
1
last month
Acq. date: 2025-12-11
Citations
Metrics
Views
1998
since deposited on 2021-10-28
1
last month
Acq. date: 2025-12-11
Citations