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Understanding ESD characteristics of GGNMOS in bulk FinFET technology

Date

2020
Proceedings Paper
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dc.contributor.authorChen, Wen Chieh
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorHellings, Geert
dc.contributor.authorChiarella, Thomas
dc.contributor.authorChen, Jie
dc.contributor.authorSubramanian, Sujith
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Wen Chieh
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorChen, Jie
dc.contributor.imecauthorSubramanian, Sujith
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecSubramanian, Sujith::0000-0001-8938-9750
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-28T20:40:54Z
dc.date.available2021-10-28T20:40:54Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34888
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9241355
dc.source.conference42nd Annual EOS/ESD Symposium 2020
dc.source.conferencedate13/09/2020
dc.source.conferencelocationReno, NV (online) USA
dc.title

Understanding ESD characteristics of GGNMOS in bulk FinFET technology

dc.typeProceedings paper
dspace.entity.typePublication
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