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Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

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dc.contributor.authorLee, Ko-Hui
dc.contributor.authorDegraeve, Robin
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBreuil, Laurent
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-22T20:24:13Z
dc.date.available2021-10-22T20:24:13Z
dc.date.issued2015
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25524
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931715002221
dc.source.beginpage45
dc.source.endpage50
dc.source.journalMicroelectronic Engineering
dc.source.volume147
dc.title

Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

dc.typeJournal article
dspace.entity.typePublication
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