3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D.

doi:10.1109/TED.2021.3068328

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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Date

2021

Journal article

https://doi.org/10.1109/TED.2021.3068328

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Fischetti, Massimo, V

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Pantelides, Sokrates T.

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Weeden-Wright, Stephanie L.

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Schrimpf, Ronald D.

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

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1742 since deposited on 2021-11-02

Acq. date: 2026-01-26

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

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