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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Publication:
3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Date
2021
Journal article
https://doi.org/10.1109/TED.2021.3068328
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Reaz, Mahmud
;
Tonigan, Andrew M.
;
Li, Kan
;
Smith, M. Brandon
;
Rony, Mohammed W.
;
Gorchichko, Mariia
;
O'Hara, Andrew
;
Linten, Dimitri
;
Mitard, Jerome
;
Fang, Jingtian
;
Zhang, En Xia
;
Alles, Michael L.
;
Weller, Robert A.
;
Fleetwood, Daniel M.
;
Reed, Robert A.
;
Fischetti, Massimo, V
;
Pantelides, Sokrates T.
;
Weeden-Wright, Stephanie L.
;
Schrimpf, Ronald D.
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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1739
since deposited on 2021-11-02
Acq. date: 2025-10-24
Citations
Metrics
Views
1739
since deposited on 2021-11-02
Acq. date: 2025-10-24
Citations