Publication:

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Date

2021
Journal article
https://doi.org/10.1109/TED.2021.3068328
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dc.contributor.authorReaz, Mahmud
dc.contributor.authorTonigan, Andrew M.
dc.contributor.authorLi, Kan
dc.contributor.authorSmith, M. Brandon
dc.contributor.authorRony, Mohammed W.
dc.contributor.authorGorchichko, Mariia
dc.contributor.authorO'Hara, Andrew
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorFang, Jingtian
dc.contributor.authorZhang, En Xia
dc.contributor.authorAlles, Michael L.
dc.contributor.authorWeller, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorReed, Robert A.
dc.contributor.authorFischetti, Massimo, V
dc.contributor.authorPantelides, Sokrates T.
dc.contributor.authorWeeden-Wright, Stephanie L.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidextReaz, Mahmud::0000-0002-5896-7850
dc.contributor.orcidextLi, Kan::0000-0002-6704-3991
dc.contributor.orcidextSmith, M. Brandon::0000-0001-8622-9284
dc.contributor.orcidextRony, Mohammed W.::0000-0002-6707-6582
dc.contributor.orcidextO'Hara, Andrew::0000-0002-0323-9039
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2022-04-28T15:10:48Z
dc.date.available2021-11-02T16:02:23Z
dc.date.available2022-04-01T09:26:29Z
dc.date.available2022-04-28T15:10:48Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3068328
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37983
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2556
dc.source.endpage2563
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages8
dc.source.volume68
dc.subject.keywordsFIELD-EFFECT TRANSISTORS
dc.subject.keywordsTECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS
dc.subject.keywordsBACKSCATTERING COEFFICIENT EXTRACTION
dc.subject.keywordsRANGE COULOMB INTERACTIONS
dc.subject.keywordsDRIFT-DIFFUSION MODEL
dc.subject.keywordsCARRIER DEGRADATION
dc.subject.keywordsPART II
dc.subject.keywordsDEFECT GENERATION
dc.subject.keywordsTRANSPORT MODEL
dc.subject.keywordsZINCBLENDE STRUCTURES
dc.title

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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