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The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Publication:
The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Buca, D.
;
Mörschbächer, M.J.
;
Holländer, B.
;
Luysberg, M.
;
Loo, Roger
;
Caymax, Matty
;
Mantl, S.
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2
since deposited on 2021-10-15
Acq. date: 2025-10-24
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1885
since deposited on 2021-10-15
Acq. date: 2025-10-24
Citations
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Downloads
2
since deposited on 2021-10-15
Acq. date: 2025-10-24
Views
1885
since deposited on 2021-10-15
Acq. date: 2025-10-24
Citations