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The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

Date

2004
Proceedings Paper
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dc.contributor.authorBuca, D.
dc.contributor.authorMörschbächer, M.J.
dc.contributor.authorHolländer, B.
dc.contributor.authorLuysberg, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMantl, S.
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T12:48:42Z
dc.date.available2021-10-15T12:48:42Z
dc.date.embargo9999-12-31
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8647
dc.source.beginpage15
dc.source.conferenceHigh-Mobility Group-IV Materials and Devices
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Fransisco, CA USA
dc.source.endpage26
dc.title

The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

dc.typeProceedings paper
dspace.entity.typePublication
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