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Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment
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2010 since deposited on 2021-10-27
Acq. date: 2025-12-16
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Views
2010 since deposited on 2021-10-27
Acq. date: 2025-12-16
Citations