Publication:
Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment
Date
| dc.contributor.author | Vohra, Anurag | |
| dc.contributor.author | Porret, Clément | |
| dc.contributor.author | Kohen, David | |
| dc.contributor.author | Folkersma, Steven | |
| dc.contributor.author | Bogdanowicz, Janusz | |
| dc.contributor.author | Schaekers, Marc | |
| dc.contributor.author | Tolle, John | |
| dc.contributor.author | Hikavyy, Andriy | |
| dc.contributor.author | Capogreco, Elena | |
| dc.contributor.author | Witters, Liesbeth | |
| dc.contributor.author | Langer, Robert | |
| dc.contributor.author | Vandervorst, Wilfried | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.imecauthor | Vohra, Anurag | |
| dc.contributor.imecauthor | Porret, Clément | |
| dc.contributor.imecauthor | Folkersma, Steven | |
| dc.contributor.imecauthor | Bogdanowicz, Janusz | |
| dc.contributor.imecauthor | Schaekers, Marc | |
| dc.contributor.imecauthor | Hikavyy, Andriy | |
| dc.contributor.imecauthor | Capogreco, Elena | |
| dc.contributor.imecauthor | Witters, Liesbeth | |
| dc.contributor.imecauthor | Langer, Robert | |
| dc.contributor.imecauthor | Vandervorst, Wilfried | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.orcidimec | Vohra, Anurag::0000-0002-2831-0719 | |
| dc.contributor.orcidimec | Porret, Clément::0000-0002-4561-348X | |
| dc.contributor.orcidimec | Bogdanowicz, Janusz::0000-0002-7503-8922 | |
| dc.contributor.orcidimec | Schaekers, Marc::0000-0002-1496-7816 | |
| dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
| dc.contributor.orcidimec | Langer, Robert::0000-0002-1132-3468 | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.date.accessioned | 2021-10-27T22:59:40Z | |
| dc.date.available | 2021-10-27T22:59:40Z | |
| dc.date.issued | 2019-03 | |
| dc.identifier.issn | 0021-4922 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/34401 | |
| dc.identifier.url | https://iopscience.iop.org/article/10.7567/1347-4065/ab027b/meta | |
| dc.source.beginpage | SBBA04-1 | |
| dc.source.endpage | SBBA04-8 | |
| dc.source.journal | Japanese Journal of Applied Physics | |
| dc.source.volume | 58 | |
| dc.title | Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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